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請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/4477
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dc.contributor.authorWu Kaien_US
dc.contributor.authorRen, I. F.en_US
dc.contributor.authorBarnard, B.en_US
dc.contributor.authorLiaw, P. K.en_US
dc.contributor.authorDemetriou, M. D.en_US
dc.contributor.authorJohnson, W. L.en_US
dc.date.accessioned2020-11-19T00:37:51Z-
dc.date.available2020-11-19T00:37:51Z-
dc.date.issued2010-05-
dc.identifier.issn1073-5623-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/4477-
dc.description.abstractThe oxidation behavior of both Pd43Cu27Ni10P20 bulk metallic glass (Pd4-BMG) and its amorphous foam containing 45 pct porosity (Pd4-AF) was investigated over the temperature range of 343 K (70 °C) to 623 K (350 °C) in dry air. The results showed that virtually no oxidation occurred in the Pd4-BMG at T < 523 K (250 °C), revealing the alloy’s favorable oxidation resistance in this temperature range. In addition, the oxidation kinetics at T ≥ 523 K (250 °C) followed a parabolic-rate law, and the parabolic-rate constants (k p values) generally increased with temperature. It was found that the oxidation k p values of the Pd4-AF are slightly lower than those of the Pd4-BMG, indicating that the porous structure contributes to improving the overall oxidation resistance. The scale formed on the alloys was composed exclusively of CuO at T ≥ 548 K (275 °C), whose thickness gradually increased with increasing temperature. In addition, the amorphous structure remained unchanged at T ≤ 548 K (275 °C), while a triplex-phase structure developed after the oxidation at higher temperatures, consisting of Pd2Ni2P, Cu3P, and Pd3P.en_US
dc.language.isoen_USen_US
dc.publisherSpringer Natureen_US
dc.relation.ispartofMetallurgical and Materials Transactions a-Physical Metallurgy and Materials Scienceen_US
dc.subjectFoamen_US
dc.subjectCu2Oen_US
dc.subjectMetallic Glassen_US
dc.subjectAmorphous Alloyen_US
dc.subjectOxidation Kineticen_US
dc.titleOxidation Behavior of a Pd43Cu27Ni10P20 Bulk Metallic Glass and Foam in Dry Airen_US
dc.typejournal articleen_US
dc.identifier.doi<Go to ISI>://WOS:000277958700019-
dc.identifier.doi<Go to ISI>://WOS:000277958700019-
dc.identifier.doi<Go to ISI>://WOS:000277958700019-
dc.identifier.doi10.1007/s11661-010-0231-5-
dc.identifier.doi<Go to ISI>://WOS:000277958700019-
dc.identifier.doi<Go to ISI>://WOS:000277958700019-
dc.identifier.url<Go to ISI>://WOS:000277958700019
dc.relation.journalvolume41Aen_US
dc.relation.journalissue7en_US
dc.relation.pages1720–1725en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypejournal article-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.orcidhttps://orcid.org/0000-0001-8791-7775-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
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