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  1. National Taiwan Ocean University Research Hub
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Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/4493
DC FieldValueLanguage
dc.contributor.authorChen, W. S.en_US
dc.contributor.authorChia-Yen Huen_US
dc.contributor.authorChiem-Lum Huangen_US
dc.contributor.authorWu Kaien_US
dc.contributor.authorYuan-Chang Liangen_US
dc.date.accessioned2020-11-19T00:37:53Z-
dc.date.available2020-11-19T00:37:53Z-
dc.date.issued2011-09-
dc.identifier.issn0272-8842-
dc.identifier.urihttp://scholars.ntou.edu.tw/handle/123456789/4493-
dc.description.abstractIn this study, we investigated the effects of forming gas (7% H2 + 93% Ar) annealing (FGA) and recovery annealing (RA) in ambient oxygen on the structure and electrical properties of BiFeO3 (BFO) thin films. X-ray diffraction results indicate that BFO remains in the perovskite phase following FGA. However, the spatial distribution of current maps obtained by conductive atomic force microscopy shows that FGA-treated BFO thin films are less electrically insulating than those without prepared thermal annealing. Recovery annealing improves the structural and chemical homogeneity of the FGA-treated films, thereby increasing the electrical resistance of the films.en_US
dc.language.isoen_USen_US
dc.publisherElsevieren_US
dc.relation.ispartofCeramics Internationalen_US
dc.subjectA. Filmsen_US
dc.subjectB. Defectsen_US
dc.subjectB. Surfacesen_US
dc.subjectC. Electrical propertiesen_US
dc.subjectD. Perovskitesen_US
dc.titleAnnealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin filmsen_US
dc.typejournal articleen_US
dc.identifier.doi<Go to ISI>://WOS:000293759300047-
dc.identifier.doi<Go to ISI>://WOS:000293759300047-
dc.identifier.doi10.1016/j.ceramint.2011.03.029-
dc.identifier.doi<Go to ISI>://WOS:000293759300047-
dc.identifier.doi<Go to ISI>://WOS:000293759300047-
dc.identifier.url<Go to ISI>://WOS:000293759300047-
dc.relation.journalvolume37en_US
dc.relation.journalissue7en_US
dc.relation.pages2391-2396en_US
item.openairetypejournal article-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.deptCollege of Electrical Engineering and Computer Science-
crisitem.author.deptDepartment of Optoelectronics and Materials Technology-
crisitem.author.deptNational Taiwan Ocean University,NTOU-
crisitem.author.orcidhttps://orcid.org/0000-0001-8791-7775-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
crisitem.author.parentorgNational Taiwan Ocean University,NTOU-
crisitem.author.parentorgCollege of Electrical Engineering and Computer Science-
Appears in Collections:光電與材料科技學系
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