Monolithic integration of a ZnS MSM photodiode and an InGaP/GaAs HBT on a GaAs substrate

Abstract

A monolithic integrated photoreceiver constructed of a ZnS MSM photodiode and an InGaP/GaAs HBT utilizing the pattern-oxide growth technique is demonstrated. The XRD and PL analyses of the as-grown ZnS epilayers exhibit good quality. The optical and electrical performance of the ZnS MSM photodiode, InGaP/GaAs HBT and integrated photoreceiver is estimated. Photocurrent induced from the ZnS MSM photodiode is amplified linearly by a common-emitter preamplifier based on an InGaP/GaAs HBT. The current amplification ratio and the voltage amplification sensitivity of the integrated photoreceiver are 18.2 and −8.7 mV µW−1, respectively. The ZnS-based integrated photoreceiver carried out successfully on a GaAs substrate indicates the potential of the pattern-oxide growth technique in the development for the II–VI WBG-based short wavelength integrated devices.