Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8084

Title:	Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
Authors:	Hsu, H. P. Huang, Y. N. Huang, Y. S. Lin, Y. T. Ma, T. C. Lin, H. H. Kwong-Kau Tiong Sitarek, P. Misiewicz, J.
Issue Date:	Jun-2008
Journal Volume:	103
Journal Issue:	11
Source:	Journal of Applied Physics
URI:	http://scholars.ntou.edu.tw/handle/123456789/8084
ISSN:	0021-8979
DOI:	10.1063/1.2927490 ://WOS:000256706200024
Appears in Collections:	電機工程學系

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