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Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8095
Title: Temperature dependence of absorption edge anisotropy in 2H-MoSe2 layered semiconductors
Authors: Hu, S. Y.
Lee, Y. C.
Shen, J. L.
Chen, K. W.
Kwong-Kau Tiong 
Huang, Y. S.
Issue Date: 2006
Journal Volume: 139
Journal Issue: 4
Source: Solid State Communications
URI: http://scholars.ntou.edu.tw/handle/123456789/8095
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2006.05.027
://WOS:000239875700009
Appears in Collections:電機工程學系

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