The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8178

Title:	The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
Authors:	Wu, P. H. Huang, Y. S. Hsu, H. P. Li, C. Huang, S. H. Kwong-Kau Tiong
Issue Date:	Jun-2014
Journal Volume:	104
Journal Issue:	24
Source:	Applied Physics Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/8178
ISSN:	0003-6951
DOI:	10.1063/1.4884063 ://WOS:000337915000018
Appears in Collections:	電機工程學系

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