Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8739

Title:	Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
Authors:	Chen, L. Y. Cheng, S. Y. Wen-Shiung Lour Tsai, J. H. Guo, D. F. Tsai, T. H. Chen, T. P. Liu, Y. C. Liu, W. C.
Issue Date:	Dec-2008
Journal Volume:	23
Journal Issue:	12
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8739
ISSN:	0268-1242
DOI:	10.1088/0268-1242/23/12/125041 ://WOS:000261114300043
Appears in Collections:	電機工程學系

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