On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8744

Title:	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
Authors:	Chen, T. P. Lee, C. J. Wen-Shiung Lour Guo, D. F. Tsai, J. H. Liu, W. C.
Issue Date:	Feb-2009
Journal Volume:	53
Journal Issue:	2
Source:	Solid-State Electronics
URI:	http://scholars.ntou.edu.tw/handle/123456789/8744
ISSN:	0038-1101
DOI:	10.1016/j.sse.2008.11.003 ://WOS:000263596100016
Appears in Collections:	電機工程學系

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