Gate-metal formation-related kink effect and gate current on In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/8759

標題:	Gate-metal formation-related kink effect and gate current on In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance
作者:	Hsu, M. K. Chen, H. R. Chiou, S. Y. Chen, W. T. Chen, G. H. Chang, Y. C. Wen-Shiung Lour
公開日期:	七月-2006
卷:	89
期:	3
來源出版物:	Applied Physics Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/8759
ISSN:	0003-6951
DOI:	10.1063/1.2222259 ://WOS:000239174100115
顯示於：	電機工程學系

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