Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8766

Title:	Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel
Authors:	Lia, C. Y. Wen-Shiung Lour Hsieh, J. L.
Issue Date:	Feb-1999
Journal Volume:	339
Journal Issue:	1-2
Source:	Thin Solid Films
URI:	http://scholars.ntou.edu.tw/handle/123456789/8766
ISSN:	0040-6090
DOI:	10.1016/s0040-6090(98)01089-x ://WOS:000079008300043
Appears in Collections:	電機工程學系

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