Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8776

Title:	Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
Authors:	Tsai, J. H. Chiu, S. Y. Wen-Shiung Lour Guo, D. F. Liu, W. C.
Issue Date:	Aug-2006
Journal Volume:	21
Journal Issue:	8
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8776
ISSN:	0268-1242
DOI:	10.1088/0268-1242/21/8/026 ://WOS:000240123100027
Appears in Collections:	電機工程學系

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