Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8778

Title:	Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles
Authors:	Tsai, J. H. Guo, D. F. Wen-Shiung Lour
Issue Date:	Sep-2011
Journal Volume:	45
Journal Issue:	9
Source:	Semiconductors
URI:	http://scholars.ntou.edu.tw/handle/123456789/8778
ISSN:	1063-7826
DOI:	10.1134/s1063782611090211 ://WOS:000295696500023
Appears in Collections:	電機工程學系

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