A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT)

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8780

Title:	A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT)
Authors:	Tsai, J. H. Lee, C. S. Wen-Shiung Lour Ma, Y. C. Ye, S. S.
Issue Date:	May-2011
Journal Volume:	45
Journal Issue:	5
Source:	Semiconductors
URI:	http://scholars.ntou.edu.tw/handle/123456789/8780
ISSN:	1063-7826
DOI:	10.1134/s1063782611050137 ://WOS:000294020200018
Appears in Collections:	電機工程學系

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