Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8787

Title:	Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
Authors:	Tsai, J. H. Ye, S. S. Guo, D. F. Wen-Shiung Lour
Issue Date:	Apr-2012
Journal Volume:	46
Journal Issue:	4
Source:	Semiconductors
URI:	http://scholars.ntou.edu.tw/handle/123456789/8787
ISSN:	1063-7826
DOI:	10.1134/s1063782612040227 ://WOS:000303054200017
Appears in Collections:	電機工程學系

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