| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
|---|---|---|---|---|---|---|
| 1998 | Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer | Wen-Shiung Lour ; Hsieh, J. L. | Semiconductor Science and Technology | 31 | ||
| 1999 | Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel | Lia, C. Y.; Wen-Shiung Lour ; Hsieh, J. L. | Thin Solid Films | 0 |
