Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/8770

標題:	Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer
作者:	Wen-Shiung Lour Hsieh, J. L.
公開日期:	八月-1998
卷:	13
期:	8
來源出版物:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8770
ISSN:	0268-1242
DOI:	10.1088/0268-1242/13/8/003 ://WOS:000075270800002
顯示於：	電機工程學系

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