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瀏覽 的方式: 作者 lour, w. s.


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公開日期標題作者來源出版物scopusWOS全文
2005Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivationShih-Wei Tan ; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S.Ieee Transactions on Electron Devices
2005Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surfaceShih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S.Superlattices and Microstructures
2005Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modesChen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S.Semiconductor Science and Technology
2002Depletion-mode and enhancement-mode InGaP/GaAs delta-HEMTs for low supply-voltage applicationsTsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Lour, W. S.; Yang, Y. J.Semiconductor Science and Technology
2001Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swingLour, W. S.; Tsai, M. K.; Chen, K. C.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J.Semiconductor Science and Technology
2002Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltageLour, W. S.; Wu, Y. W.; Shih-Wei Tan ; Tsai, M. K.; Yang, Y. J.Applied Physics Letters
2004Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applicationsShih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S.Semiconductor Science and Technology
2005Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistorsChen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S.Semiconductor Science and Technology
2009GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticlesChiu, S. Y.; Hsiang-Wen Huang ; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Lour, W. S.Electronics Letters
2003Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidationTsai, M. K.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J.; Lour, W. S.Ieee Transactions on Electron Devices
2002Investigation of self-aligned p(++)-GaAs/n-InGaP heterojunction field-effect transistorsLour, W. S.; Tsai, M. K.; Chen, K. C.; Shih-Wei Tan ; Wu, Y. W.; Yang, Y. J.Physica E-Low-Dimensional Systems & Nanostructures
2003New composite-emitter HBTs with reduced turn-on voltage and small offset voltageTsai, M. K.; Wu, Y. W.; Shih-Wei Tan ; Yang, Y. J.; Lour, W. S.Compound Semiconductors 2002
2003Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S.Superlattices and Microstructures
2004Performance enhancement of double-emitter HPTs with different emitter-area ratiosShih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S.Electronics Letters
2004Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gateShih-Wei Tan ; Hsu, M. K.; Lin, A. H.; Chu, M. Y.; Chen, W. T.; Lour, W. S.Semiconductor Science and Technology
2004Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glassShih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S.Semiconductor Science and Technology
顯示 1 到 16 筆資料,總共 16 筆
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