Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/8883

標題:	Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass
作者:	Shih-Wei Tan Chen, W. T. Chu, M. Y. Lour, W. S.
公開日期:	二月-2004
卷:	19
期:	2
來源出版物:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8883
ISSN:	0268-1242
DOI:	10.1088/0268-1242/19/2/007 ://WOS:000189377900007
顯示於：	電機工程學系

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