第 1 到 33 筆結果,共 33 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
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1 | 2019 | Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers | Tsai, J. H.; Lin, P. S.; Wen-Shiung Lour ; Liu, W. C. | Ecs Journal of Solid State Science and Technology | ||
2 | 2013 | Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture | Lo, C.; Wei, C. Y.; Tsai, J. H.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | ||
3 | 2012 | Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors | Lo, C.; Wei, C. Y.; Tsai, J. H.; Hsu, K. Y.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | ||
4 | 2012 | High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode | Tsai, J. H.; Huang, C. H.; Wen-Shiung Lour ; Chao, Y. T.; Ou-Yang, J. J.; Jhou, J. C. | Thin Solid Films | ||
5 | 2012 | An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage | Tsai, J. H.; Wen-Shiung Lour ; Chao, Y. T.; Ye, S. S.; Ma, Y. C.; Jhou, J. C.; Wu, Y. R.; Ou-Yang, J. J. | Thin Solid Films | ||
6 | 2012 | Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers | Tsai, J. H.; Ye, S. S.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | ||
7 | 2011 | Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer | Tsai, J. H.; Lai, S. W.; Lo, C.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | ||
8 | 2011 | Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors with Triple Doped-Channel Profiles | Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Semiconductors | ||
9 | 2011 | A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT) | Tsai, J. H.; Lee, C. S.; Wen-Shiung Lour ; Ma, Y. C.; Ye, S. S. | Semiconductors | ||
10 | 2010 | InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures | Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C.; Wu, Y. Z.; Dai, Y. F. | Semiconductors | ||
11 | 2010 | Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor | Tsai, J. H.; Wen-Shiung Lour ; Huang, C. H.; Dale, N. F.; Lee, Y. H.; Sheng, J. S.; Liu, W. C. | Solid-State Electronics | ||
12 | 2010 | InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage | Tsai, J. H.; Wen-Shiung Lour ; Weng, T. Y.; Li, C. M. | Semiconductors | ||
13 | 2009 | Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure | Chiu, S. Y.; Tsai, J. H.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, T. M.; Hsu, K. Y.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | ||
14 | 2009 | Comprehensive investigation on planar type of Pd-GaN hydrogen sensors | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | International Journal of Hydrogen Energy | ||
15 | 2009 | High-performance InGaP/GaAs pnp delta-doped heterojunction bipolar transistor | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F. | Semiconductors | ||
16 | 2009 | InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure | Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Electronics Letters | ||
17 | 2009 | Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Sensors and Actuators B-Chemical | ||
18 | 2009 | GaN Sensors with Metal-Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration | Chiu, S. Y.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Huang, H. W.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | ||
19 | 2009 | High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 | Chiu, S. Y.; Huang, H. W.; Liang, K. C.; Huang, T. H.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Semiconductor Science and Technology | ||
20 | 2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | ||
21 | 2009 | Microwave complementary doped-channel field-effect transistors | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Liu, W. C.; Li, C. M.; Su, N. X.; Wu, Y. Z.; Huang, Y. S. | Superlattices and Microstructures | ||
22 | 2009 | Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors | Chen, T. P.; Lee, C. J.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Ku, G. W.; Liu, W. C. | Electrochemical and Solid State Letters | ||
23 | 2008 | Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor | Chen, L. Y.; Cheng, S. Y.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Tsai, T. H.; Chen, T. P.; Liu, Y. C.; Liu, W. C. | Semiconductor Science and Technology | ||
24 | 2008 | High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles | Chiu, S. Y.; Huang, H. W.; Huang, T. H.; Liang, K. C.; Liu, K. P.; Tsai, J. H.; Wen-Shiung Lour | Ieee Electron Device Letters | ||
25 | 2008 | Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment | Chiu, S. Y.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Liu, W. C.; Tsai, J. H.; Wen-Shiung Lour | Japanese Journal of Applied Physics | ||
26 | 2007 | Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors | Chen, T. P.; Fu, S. I.; Liu, W. C.; Cheng, S. Y.; Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Journal of Applied Physics | ||
27 | 2007 | Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Tsai, J. H.; Wen-Shiung Lour | Journal of the Electrochemical Society | ||
28 | 2007 | Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure | Chen, T. P.; Fu, S. I.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Liu, W. C. | Electrochemical and Solid State Letters | ||
29 | 2007 | Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | ||
30 | 2007 | Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector | Guo, D. F.; Yen, C. H.; Tsai, J. H.; Wen-Shiung Lour ; Liu, W. C. | Journal of the Electrochemical Society | ||
31 | 2006 | Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor | Chen, T. P.; Fu, S. I.; Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Cheng, S. Y.; Liu, W. C. | Semiconductor Science and Technology | ||
32 | 2006 | Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) | Chen, C. W.; Lai, P. H.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, A. C. | Semiconductor Science and Technology | ||
33 | 2006 | Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage | Tsai, J. H.; Chiu, S. Y.; Wen-Shiung Lour ; Guo, D. F.; Liu, W. C. | Semiconductor Science and Technology | 2 |