第 1 到 12 筆結果,共 12 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 2005 | Three-terminal dual-emitter phototransistor with both voltageand power-tunable optical gains | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
2 | 2005 | Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S. | Semiconductor Science and Technology | ||
3 | 2005 | Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Shih-Wei Tan ; Lour, W. S. | Semiconductor Science and Technology | ||
4 | 2005 | Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface | Shih-Wei Tan ; Chen, H. R.; Chu, M. Y.; Chen, W. T.; Lin, A. H.; Hsu, M. K.; Lin, T. S.; Lour, W. S. | Superlattices and Microstructures | ||
5 | 2005 | Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation | Shih-Wei Tan ; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S. | Ieee Transactions on Electron Devices | ||
6 | 2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | ||
7 | 2004 | Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications | Shih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | ||
8 | 2004 | Performance enhancement of double-emitter HPTs with different emitter-area ratios | Shih-Wei Tan ; Chen, H. R.; Lin, A. H.; Chen, W. T.; Lour, W. S. | Electronics Letters | ||
9 | 2004 | Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate | Shih-Wei Tan ; Hsu, M. K.; Lin, A. H.; Chu, M. Y.; Chen, W. T.; Lour, W. S. | Semiconductor Science and Technology | ||
10 | 2004 | Sub-0.5-mu m gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass | Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S. | Semiconductor Science and Technology | ||
11 | 2003 | An investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors | Chen, W. T.; Chu, M. Y.; Tsai, M. K.; Yang, Y. J.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | ||
12 | 2003 | Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs) | Shih-Wei Tan ; Chen, W. T.; Chu, M. Y.; Lour, W. S. | Superlattices and Microstructures |