第 1 到 2 筆結果,共 2 筆。
公開日期 | 標題 | 作者 | 來源出版物 | WOS | 全文 | |
---|---|---|---|---|---|---|
1 | 1998 | Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer | Wen-Shiung Lour ; Hsieh, J. L. | Semiconductor Science and Technology | 31 | |
2 | 1998 | Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors | Wen-Shiung Lour ; Lia, C. Y. | Semiconductor Science and Technology | 22 |