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Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link | |
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1 | 1998 | Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs delta-doped single heterojunction bipolar transistors using an InGaP passivation layer | Wen-Shiung Lour ; Hsieh, J. L. | Semiconductor Science and Technology | 31 | |
2 | 1998 | Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors | Wen-Shiung Lour ; Lia, C. Y. | Semiconductor Science and Technology | 22 |