Results 1-5 of 5 (Search time: 0.003 seconds).

	Issue Date	Title	Author(s)	Source
1	2010	CMOS on dual SOI thickness for optimal performance	Lo, H. C.; Li, C. T.; Chen, Y. T.; Yang, C. T.; Luo, W. C.; Lu, W. Y.; Cheng-Fa Cheng ; Chen, T. L.; Lien, C. H.; Tsai, H. T.; Chen, M. C.; Fung, S. K. H.; Wu, C. C.	Microelectronic Engineering
2	2010	Optimization of Back Channel Leakage Characteristic in PD SOI p-MOSFET	Lo, H. C.; Chen, Y. T.; Li, C. T.; Luo, W. C.; Lu, W. Y.; Chen, M. C.; Cheng-Fa Cheng ; Chen, T. L.; Yang, C. T.; Lien, C. H.; Fung, S. K. H.; Wu, C. C.	Journal of the Electrochemical Society
3	2009	The Characteristics and Control of Body-to-Body Leakage Current in PD-SOI	Lo, H. C.; Luo, W. C.; Lu, W. Y.; Cheng-Fa Cheng ; Chen, T. L.; Lien, C. H.; Fung, S. K. H.; Wu, C. C.	Journal of the Electrochemical Society
4	2005	Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETs	Liao, C. C.; Yu, D. S.; Cheng-Fa Cheng ; Chin, A.	Journal of the Electrochemical Society
5	2004	The copper contamination effect of Al2O3 gate dielectric on Si	Liao, C. C.; Cheng-Fa Cheng ; Yu, D. S.; Chin, A.	Journal of the Electrochemical Society