Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/10781

標題:	Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices
作者:	Chen, P. S. Chen, Y. S. Lee, H. Y. Wu, T. Y. Tsai, K. H. Gu, P. Y. Chen, W. S. Chen-Han Tsai Chen, F. Tsai, M. J.
公開日期:	五月-2013
卷:	105
來源出版物:	Microelectronic Engineering
URI:	http://scholars.ntou.edu.tw/handle/123456789/10781
ISSN:	0167-9317
DOI:	10.1016/j.mee.2012.12.012 ://WOS:000316529600007
顯示於：	海洋環境資訊系

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