Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/10786

標題:	Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
作者:	Chen, Y. S. Lee, H. Y. Chen, P. S. Chen, W. S. Tsai, K. H. Gu, P. Y. Wu, T. Y. Chen-Han Tsai Rahaman, S. Z. Lin, Y. D. Chen, F. Tsai, M. J. Ku, T. K.
公開日期:	二月-2014
卷:	35
期:	2
來源出版物:	Ieee Electron Device Letters
URI:	http://scholars.ntou.edu.tw/handle/123456789/10786
ISSN:	0741-3106
DOI:	10.1109/led.2013.2294375 ://WOS:000331377500018
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