Growth and properties of single phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/16056

Title:	Growth and properties of single phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor
Authors:	D. Y. Lyu T. Y. Lin J. H. Lin S. C. Tseng J. S. Hwang H. P. Chiang
Issue Date:	2006
Publisher:	Optics and Photonics Taiwan
Conference:	Optics and Photonics Taiwan
URI:	http://scholars.ntou.edu.tw/handle/123456789/16056
Appears in Collections:	光電與材料科技學系

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