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  1. National Taiwan Ocean University Research Hub
  2. 電機資訊學院
  3. 光電與材料科技學系
Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/20161
Title: Characterization of cosputtered NbTaMoW films
Authors: Chen, Yung-, I 
Chen, Chun-Yen
Chang, Li-Chun
Kai, Wu 
Keywords: High-entropy alloy;Medium-entropy alloy film;Mechanical property;Multilayered film;Oxidation behavior
Issue Date: 1-Nov-2021
Publisher: ELSEVIER
Journal Volume: 15
Start page/Pages: 1090-1099
Source: JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
Abstract: 
In this study, NbTaMoW medium-entropy alloy films were prepared using a cosputtering apparatus with four sputter guns. Pure-element targets were used for sputtering. The rotational speeds of the substrate holder (R-S) were 1-30 rpm. Lower R-S values resulted in the formed films exhibiting a multilayer stacked structure with a cyclical gradient concentration. The crystalline phases, mechanical properties, and oxidation behavior of the prepared NbTaMoW films were investigated. The uniformity of the prepared multilayered alloy films increased with the RS value. The monolithic NbTaMoW alloy films prepared at 30 rpm exhibited a single body-centered cubic (BCC) phase, hardness of 12.9 GPa, and Young's modulus of 278 GPa. The BCC phase evolved into a combination of multiple BCC phases when R-S was <10 rpm. The multilayered NbTaMoW alloy films prepared at 10 rpm exhibited high hardness of 14.1 GPa and a comparable Young's modulus of 274 GPa. The prepared NbTaMoW films exhibited activation energy of 104 kJ/mol at 350-600 degrees C in air, and MoO3 was volatilized at temperatures of >= 550 degrees C. The monolithic and multilayered NbTaMoW films with a thickness of approximately 1240 nm were completely oxidized after annealing at 600 degrees C for 2 h. (c) 2021 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
URI: http://scholars.ntou.edu.tw/handle/123456789/20161
ISSN: 2238-7854
DOI: 10.1016/j.jmrt.2021.08.093
Appears in Collections:光電與材料科技學系

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