|Title:||Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications||Authors:||Cheng, Yuang-Tung
|Keywords:||poly-silicon germanium (poly-SiGe);low pressure chemical vapor deposition (LPCVD) system;responsivity;quantum efficiency;avalanche multiplication factor||Issue Date:||1-Feb-2022||Publisher:||MDPI||Journal Volume:||22||Journal Issue:||3||Source:||SENSORS||Abstract:||
This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 degrees C for 30 min annealing in the hydrogen atmosphere. Under a 3-mu W/cm(2) incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n(+)-n-p-p(+) alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.
|Appears in Collections:||機械與機電工程學系|
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