http://scholars.ntou.edu.tw/handle/123456789/22825
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiao-Yun Chang | en_US |
dc.contributor.author | Heng Li | en_US |
dc.contributor.author | Kuo-Bin Hong | en_US |
dc.contributor.author | Ya-Yu Yang | en_US |
dc.contributor.author | Wei-Chih Lai | en_US |
dc.contributor.author | Tien-Chang Lu | en_US |
dc.date.accessioned | 2022-10-31T00:42:31Z | - |
dc.date.available | 2022-10-31T00:42:31Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/22825 | - |
dc.description.abstract | We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
dc.relation.ispartof | SUPERLATTICES AND MICROSTRUCTURES | en_US |
dc.subject | LIGHT-EMITTING-DIODES | en_US |
dc.subject | LASER-DIODES | en_US |
dc.subject | GAN | en_US |
dc.subject | MOVPE | en_US |
dc.subject | PHOTOLUMINESCENCE | en_US |
dc.subject | SUBSTRATE | en_US |
dc.subject | SAPPHIRE | en_US |
dc.subject | GROWTH | en_US |
dc.title | Double superstructures in InGaN/GaN nano-pyramid arrays | en_US |
dc.type | journal article | en_US |
dc.identifier.doi | 10.1016/j.spmi.2015.07.059 | - |
dc.identifier.isi | 000362603100033 | - |
dc.relation.journalvolume | 86 | en_US |
dc.relation.pages | 275-279 | en_US |
item.languageiso639-1 | en_US | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
crisitem.author.dept | Department of Electrical Engineering | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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