http://scholars.ntou.edu.tw/handle/123456789/22825
Title: | Double superstructures in InGaN/GaN nano-pyramid arrays | Authors: | Chiao-Yun Chang Heng Li Kuo-Bin Hong Ya-Yu Yang Wei-Chih Lai Tien-Chang Lu |
Keywords: | LIGHT-EMITTING-DIODES;LASER-DIODES;GAN;MOVPE;PHOTOLUMINESCENCE;SUBSTRATE;SAPPHIRE;GROWTH | Issue Date: | Jul-2015 | Publisher: | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | Journal Volume: | 86 | Start page/Pages: | 275-279 | Source: | SUPERLATTICES AND MICROSTRUCTURES | Abstract: | We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/22825 | ISSN: | 0749-6036 | DOI: | 10.1016/j.spmi.2015.07.059 |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.