http://scholars.ntou.edu.tw/handle/123456789/22842
標題: | Growth and Characteristics of a-Plane GaN on ZnO Heterostructure | 作者: | Huei-Min Huang Chin-Chia Kuo Chiao-Yun Chang Yuan-Ting Lin Tien-Chang Lu Li-Wei Tu Wen-Feng Hsieh |
關鍵字: | LIGHT-EMITTING-DIODES;OPTICAL-PROPERTIES | 公開日期: | 一月-2012 | 出版社: | ELECTROCHEMICAL SOC INC | 卷: | 159 | 期: | 3 | 起(迄)頁: | 303–307 | 來源出版物: | Journal of The Electrochemical Society | 摘要: | We report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier localization effect in the GaN/ZnO heterointerface is observed from the S-shaped energy shift with increasing temperature in the temperature-dependent photoluminescence measurement. The carrier localization also results in strong luminescent intensity and dominates the emission spectrum at room temperature. In addition, the acceptor level originated from the Zn out-diffusion from the ZnO layer is observed in the low temperature photoluminescence spectra, and its binding energy is estimated to be about 0.311 eV. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/22842 | ISSN: | 0013-4651 | DOI: | 10.1149/2.080203jes |
顯示於: | 電機工程學系 |
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