http://scholars.ntou.edu.tw/handle/123456789/22843
標題: | Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates | 作者: | Huei-Min Huang Tien-Chang Lu Chiao-Yun Chang Shih-Chun Ling Wei-Wen Chan Hao-Chung Kuo Shing-Chung Wang |
關鍵字: | LIGHT-EMITTING-DIODES;FILMS | 公開日期: | 八月-2011 | 出版社: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | 卷: | 29 | 期: | 18 | 起(迄)頁: | 2761-2675 | 來源出版物: | JOURNAL OF LIGHTWAVE TECHNOLOGY | 摘要: | Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 × 10 -2 to 2.58 × 10 -2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/22843 | ISSN: | 0733-8724 | DOI: | 10.1109/JLT.2011.2164896 |
顯示於: | 電機工程學系 |
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