http://scholars.ntou.edu.tw/handle/123456789/23011
Title: | Origin of hot carriers in InGaN-based quantum-well solar cells |
Authors: | KY Lai GJ Lin Cheng-Ying Chen Y-L Lai JH He |
Keywords: | PARAMETERS;Quantum well devices;Gallium nitride;Photovoltaic cells;Photonic band gap;Hot carriers;Absorption;Lattices |
Issue Date: | Dec-2010 |
Publisher: | IEEE |
Journal Volume: | 32 |
Journal Issue: | 2 |
Start page/Pages: | 179-181 |
Source: | IEEE Electron Device Letters |
Abstract: | In x Ga 1-x N/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (η) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase in η. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/23011 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2091619 |
Appears in Collections: | 光電與材料科技學系 |
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