http://scholars.ntou.edu.tw/handle/123456789/23020
標題: | UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers | 作者: | Min-Yung Ke Tzu-Chun Lu Sheng-Chieh Yang Cheng-Pin Chen Yun-Wei Cheng Liang-Yi Chen Cheng-Ying Chen Jr-Hau He JianJang Huang |
關鍵字: | EMITTING-DIODES;ZNO | 公開日期: | 十二月-2009 | 出版社: | Optical Society of America | 卷: | 17 | 期: | 25 | 起(迄)頁: | 22912-22917 | 來源出版物: | Optics express | 摘要: | In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/23020 | ISSN: | 1094-4087 | DOI: | 10.1364/OE.17.022912 |
顯示於: | 光電與材料科技學系 |
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