|Title:||Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications||Authors:||Fu-He Hsiao
|Keywords:||Micro-LED;Red InGaN-based LED;Visible light communication||Issue Date:||27-Jul-2023||Publisher:||Springer||Journal Volume:||18||Start page/Pages:||95||Source:||Discover Nano||Abstract:||
In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.
|Appears in Collections:||電機工程學系|
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