http://scholars.ntou.edu.tw/handle/123456789/24067
標題: | Crystal Characteristic of GaN/ZnO Heterostructure Grown by Molecular Beam Epitaxy | 作者: | Chiao-Yun Chang Yu-Pin Lan Huei-Min Huang Tien-Chang Lu Li-Wei Tu Wen-Feng Hsieh Hao-Chung Kuo Shing-Chung Wang |
公開日期: | 九月-2013 | 起(迄)頁: | 294-295 | 摘要: | The growth mechanism and characteristics of the nonpolar GaN/ZnO heterostructure grown on the r-plane sapphire substrate by using molecular beam epitaxy were studied. The crystal interaction between GaN and ZnO epitaxial layers was clarified by using transmission electron microscopy and X-ray diffraction. A new epitaxial relationship of ZnGa2O4 (220)//GaN (101̅3̅) in the normal surface direction was obtained in the GaN/ZnO heterostructure. It was believed that the formation of ZnGa2O4 (220) was due to the recrystallization of the ZnO layer with Ga atoms, which in turn resulted in the formation of semipolar-oriented GaN. In addition, the main optical transition in the GaN/ZnO heterostructure was attributed to the existence of the interface states and new ZnO:(Ga,N) alloys. |
URI: | http://scholars.ntou.edu.tw/handle/123456789/24067 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。