Characterization of ZrBSiTaN<i>_x</i> Films

Abstract

In this study, ZrBSiTa and (ZrBSiTa)N-x films were deposited on silicon wafers through direct current magnetron cosputtering. The nitrogen flow ratio (R-N2) of the reactive gas and the sputter power applied to the Si target (P-Si) were the variables in the fabricating processes. The influence of the N and Si contents on the mechanical properties, thermal stability, and oxidation behavior of the ZrBSiTa and (ZrBSiTa)N-x films were investigated. All the as-fabricated films exhibited amorphous structures. The R-N2 set at 0.1, 0.2, and 0.4 caused the ZrBSiTaNx films to exhibit high N contents of 52-55, 62-64, and 63-64 at.%, respectively. The Si content of the ZrBSiTa films increased from 0 to 42 at.% as P-Si increased from 0 to 150 W, and this was accompanied by decreases in hardness and Young's modulus values from 19.1 to 14.3 GPa and 264 to 242 GPa, respectively. In contrast, the increase in Si content of the (ZrBSiTa)N-x films from 0 to 21 at.% increased the hardness from 11.5 to 14.0 GPa, and Young's modulus from 207 to 218 GPa. Amorphous BN and SiNx phases in the (ZrBSiTa)N-x films varied the structural and mechanical properties. The thermal stability of the (ZrBSiTa)N-x films was evaluated by annealing at 800-900 degrees C for 10-30 min in Ar. The oxidation behavior of the (ZrBSiTa)N-x films was evaluated in the ambient air at 800 degrees C for 0.5-24 h. The amorphous (ZrBSiTa)N-x films with a high Si content had high thermal stability and oxidation resistance.