http://scholars.ntou.edu.tw/handle/123456789/4445
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wu Kai | en_US |
dc.contributor.author | Chen, W. S. | en_US |
dc.contributor.author | Wu, Y. H. | en_US |
dc.contributor.author | Lin, P. C. | en_US |
dc.contributor.author | Chuang, C. P. | en_US |
dc.contributor.author | Liaw, P. K. | en_US |
dc.date.accessioned | 2020-11-19T00:37:46Z | - |
dc.date.available | 2020-11-19T00:37:46Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://scholars.ntou.edu.tw/handle/123456789/4445 | - |
dc.description.abstract | The oxidation behavior of a binary Cu50Zr50 bulk amorphous ribbon (CZ2-AR) was studied over the temperature range of 350–425 °C in dry air. The oxidation kinetics of the CZ2-AR generally followed a parabolic-rate law, indicating that diffusion is the rate-controlling step during oxidation. The oxidation rates of the CZ2-AR were strongly temperature-dependent, with its scaling-rate constants (ks values) increasing with temperature. Duplex scales formed on the CZ2-AR alloy were composed of an outer-layer of exclusive CuO and of a heterophasic inner-layer of CuO, monoclinic-ZrO2 (m-ZrO2) and tetragonal-ZrO2 (t-ZrO2). In addition, the CZ2-AR substrate started to form the crystalline Cu10Zr7 phase beneath the scales during the oxidation at T ≥ 375 °C, indicative of the occurrence of the crystallization of the amorphous substrate. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Journal of Alloys and Compounds | en_US |
dc.subject | Oxidation | en_US |
dc.subject | Cu50Zr50 bulk amorphous ribbon | en_US |
dc.subject | CuO | en_US |
dc.subject | m-ZrO2 | en_US |
dc.subject | t-ZrO2 | en_US |
dc.title | Air-oxidation of a Cu50Zr50 binary amorphous ribbon at 350–425 °C | en_US |
dc.type | journal article | en_US |
dc.identifier.doi | <Go to ISI>://WOS:000310837500024 | - |
dc.identifier.doi | <Go to ISI>://WOS:000310837500024 | - |
dc.identifier.doi | 10.1016/j.jallcom.2011.12.175 | - |
dc.identifier.doi | <Go to ISI>://WOS:000310837500024 | - |
dc.identifier.doi | <Go to ISI>://WOS:000310837500024 | - |
dc.identifier.url | <Go to ISI>://WOS:000310837500024 | |
dc.relation.journalvolume | 536 | en_US |
dc.relation.pages | S103-S108 | en_US |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en_US | - |
crisitem.author.dept | College of Electrical Engineering and Computer Science | - |
crisitem.author.dept | Department of Optoelectronics and Materials Technology | - |
crisitem.author.dept | National Taiwan Ocean University,NTOU | - |
crisitem.author.orcid | https://orcid.org/0000-0001-8791-7775 | - |
crisitem.author.parentorg | National Taiwan Ocean University,NTOU | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
Appears in Collections: | 光電與材料科技學系 |
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