Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8085

Title:	Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy
Authors:	Hsu, H. P. Huang, Y. N. Huang, Y. S. Lin, Y. T. Ma, T. C. Lin, H. H. Kwong-Kau Tiong Sitarek, P. Misiewicz, J.
Issue Date:	May-2009
Journal Volume:	206
Journal Issue:	5
Source:	Physica Status Solidi a-Applications and Materials Science
URI:	http://scholars.ntou.edu.tw/handle/123456789/8085
ISSN:	1862-6300
DOI:	10.1002/pssa.200881409 ://WOS:000266472100013
Appears in Collections:	電機工程學系

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