Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8735

Title:	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
Authors:	Chen, C. W. Lai, P. H. Wen-Shiung Lour Guo, D. F. Tsai, J. H. Liu, A. C.
Issue Date:	Sep-2006
Journal Volume:	21
Journal Issue:	9
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8735
ISSN:	0268-1242
DOI:	10.1088/0268-1242/21/9/024 ://WOS:000240123200025
Appears in Collections:	電機工程學系

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