Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8771

Title:	Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors
Authors:	Wen-Shiung Lour Lia, C. Y.
Issue Date:	Jul-1998
Journal Volume:	13
Journal Issue:	7
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8771
ISSN:	0268-1242
DOI:	10.1088/0268-1242/13/7/024 ://WOS:000074823100022
Appears in Collections:	電機工程學系

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