Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/8861

Title:	Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors
Authors:	Chen, H. R. Chen, W. T. Hsu, M. K. Shih-Wei Tan Lour, W. S.
Issue Date:	Sep-2005
Journal Volume:	20
Journal Issue:	9
Source:	Semiconductor Science and Technology
URI:	http://scholars.ntou.edu.tw/handle/123456789/8861
ISSN:	0268-1242
DOI:	10.1088/0268-1242/20/9/008 ://WOS:000232176800010
Appears in Collections:	電機工程學系

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