Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
2009 | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) | Chen, T. P.; Lee, C. J.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, W. C. | Solid-State Electronics | | |
2022 | An Optimized Method for Solving Membership-based Neutrosophic Linear Programming Problems | Nafei, Amirhossein; Huang, Chien-Yi; Azizi, S. Pourmohammad ; Chen, Shu-Chuan | STUDIES IN INFORMATICS AND CONTROL | | |
2007 | Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate | Chen, H. R.; Hsu, M. K.; Chiu, S. Y.; T Chen, W.; Chen, G. H.; Chang, Y. C.; Su, C. C.; Wen-Shiung Lour | Semiconductor Science and Technology | | |
2016 | Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell | Huang, Tzu-Hsuan; Lo, Hao; Lo, Chieh; Wu, Meng-Chyi; Lour, Wen-Shiung | SOLID STATE ELECTRON | 3 | |
2016 | Photovoltaic Performance of Ge-Subcell Evaluated Directly in Ge-Based Triple-Junction Solar Cells | Huang, T. H.; Lo, H.; Lo, C.; Wu, M. C.; W. S. Lour | ECS J SOLID STATE SC | 1 | |
2007 | Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment | Chen, W. T.; Chen, H. R.; Chiu, S. Y.; Hsu, M. K.; Tsai, J. H.; Wen-Shiung Lour | Journal of the Electrochemical Society | | |
2013 | Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture | Lo, C.; Wei, C. Y.; Tsai, J. H.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |
2016 | Static and dynamic properties of a GaAs p-i-n position-sensitive detector (PSD) | Huang, Tzu-Hsuan; Lo, Hao; Lo, Chieh; Wu, Meng-Chyi; W.S. Lour | SENSOR ACTUAT A-PHYS | 6 | |
2007 | Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors | Chen, T. P.; Fu, S. I.; Liu, W. C.; Cheng, S. Y.; Tsai, J. H.; Guo, D. F.; Wen-Shiung Lour | Journal of Applied Physics | | |
2006 | Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT) | Chen, C. W.; Lai, P. H.; Wen-Shiung Lour ; Guo, D. F.; Tsai, J. H.; Liu, A. C. | Semiconductor Science and Technology | | |
2007 | Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure | Chen, T. P.; Fu, S. I.; Wen-Shiung Lour ; Tsai, J. H.; Guo, D. F.; Liu, W. C. | Electrochemical and Solid State Letters | | |
2006 | Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor | Chen, T. P.; Fu, S. I.; Tsai, J. H.; Wen-Shiung Lour ; Guo, D. F.; Cheng, S. Y.; Liu, W. C. | Semiconductor Science and Technology | | |
2005 | The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Wen-Shiung Lour ; Shih-Wei Tan | Journal of Applied Physics | | |
2005 | Three-terminal dual-emitter phototransistor with both voltageand power-tunable optical gains | Chen, H. R.; Chen, W. T.; Hsu, M. K.; Wen-Shiung Lour ; Shih-Wei Tan | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | | |
2012 | Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors | Lo, C.; Wei, C. Y.; Tsai, J. H.; Hsu, K. Y.; Wen-Shiung Lour ; Shih-Wei Tan | International Journal of Hydrogen Energy | | |