Issue Date | Title | Author(s) | Source | WOS | Fulltext/Archive link |
2004 | Behaviors of AlxGa1-xN (0.5 <= x <= 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films | Gong, J. R.; Huang, C. W.; Tseng, S. F.; Tai-Yuan Lin ; Lin, K. M.; Liao, W. T.; Tsai, Y. L.; Shi, B. H.; Wang, C. L. | Journal of Crystal Growth | 9 | |
2003 | Effects of Al-containing intermediate III-nitride strained multilayers on the threading dislocation density and optical properties of GaN films | Gong, J. R.; Tseng, S. F.; Huang, C. W.; Tsai, Y. L.; Liao, W. T.; Wang, C. L.; Shi, B. H.; Tai-Yuan Lin | Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers | 11 | |
2009 | Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O | Yen, K. Y.; Liu, K. P.; Gong, J. R.; Tsai, K. Y.; Lyu, D. Y.; Tai-Yuan Lin ; Ni, G. Y.; Jih, F. W. | Journal of Materials Science-Materials in Electronics | 1 | |
2006 | Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers | Wang, C. L.; Gong, J. R.; Yeh, M. F.; Wu, B. J.; Liao, W. T.; Tai-Yuan Lin ; Lin, C. K. | Ieee Photonics Technology Letters | 6 | |
2006 | Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films | Wang, C. L.; Wang, W. L.; Liao, W. T.; Gong, J. R.; Lin, C. K.; Tai-Yuan Lin | Journal of Crystal Growth | 0 | |
2006 | Morphological and luminescent characteristics of GaN dots deposited on AIN by alternate supply of TMG and NH3 | Tsai, Y. L.; Gong, J. R.; Tai-Yuan Lin ; Lin, H. Y.; Chen, Y. F.; Lin, K. M. | Applied Surface Science | 3 | |
2006 | On the characteristics of AlGaN films grown on (111) and (001)Si substrates | Wang, C. L.; Gong, J. R.; Liao, W. T.; Wang, W. L.; Tai-Yuan Lin ; Lin, C. K. | Solid State Communications | 1 | |
2008 | Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O | Lin, P. Y.; Gong, J. R.; Li, P. C.; Tai-Yuan Lin ; Lyu, D. Y.; Lin, D. Y.; Lin, H. J.; Li, T. C.; Chang, K. J.; Lin, W. J. | Journal of Crystal Growth | 14 | |
2009 | Self-limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide | Lin, Y. T.; Chung, P. H.; Lai, H. W.; Su, H. L.; Lyu, D. Y.; Yen, K. Y.; Tai-Yuan Lin ; Kung, C. Y.; Gong, J. R. | Applied Surface Science | 19 | |