Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

請用此 Handle URI 來引用此文件： http://scholars.ntou.edu.tw/handle/123456789/10828

標題:	Experimental investigation of the reliability issue of RRAM based on high resistance state conduction
作者:	Zhang, L. J. Hsu, Y. Y. Chen, F. T. Lee, H. Y. Chen, Y. S. Chen, W. S. Gu, P. Y. Liu, W. H. Wang, S. M. Chen-Han Tsai Huang, R. Tsai, M. J.
公開日期:	六月-2011
卷:	22
期:	25
來源出版物:	Nanotechnology
URI:	http://scholars.ntou.edu.tw/handle/123456789/10828
ISSN:	0957-4484
DOI:	10.1088/0957-4484/22/25/254016 ://WOS:000290619900017
顯示於：	海洋環境資訊系

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