High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/1984

Title:	High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric
Authors:	Dai, M. K. Tai-Yuan Lin Yang, M. H. Lee, C. K. Chen, Y. F. Chih-Ching Huang
Issue Date:	Jul-2014
Journal Volume:	2
Journal Issue:	27
Source:	Journal of Materials Chemistry C
URI:	http://scholars.ntou.edu.tw/handle/123456789/1984
ISSN:	2050-7526
DOI:	10.1039/c4tc00598h ://WOS:000338601800012
Appears in Collections:	光電與材料科技學系

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