Behaviors of AlxGa1-xN (0.5 <= x <= 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/1987

Title:	Behaviors of AlxGa1-xN (0.5 <= x <= 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films
Authors:	Gong, J. R. Huang, C. W. Tseng, S. F. Tai-Yuan Lin Lin, K. M. Liao, W. T. Tsai, Y. L. Shi, B. H. Wang, C. L.
Issue Date:	Jan-2004
Journal Volume:	260
Journal Issue:	1-2
Source:	Journal of Crystal Growth
URI:	http://scholars.ntou.edu.tw/handle/123456789/1987
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2003.08.030 ://WOS:000187730000012
Appears in Collections:	光電與材料科技學系

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