High-Efficiency Ultrathin Si-Based Solar Cells by Cascading Dilute-Nitride GaNAsP

Abstract

Thin-film solar cells are currently an important research subject. In this study, a lattice-matched GaNAsP/Si tandem cell was designed. We adopted the drift-diffusion model to analyze the power conversion efficiency (PCE) of the solar cell. To find the maximum solar cell PCE, the recombination terms and the interlayer between subcells was omitted. For an optimal tandem cell PCE, this study analyzed the mole fraction combinations of GaNAsP and the thickness combinations between the GaNAsP and the Si subcells of the tandem cell. Our results showed the superiority of the tandem cell over the Si cell. The 4.5 mu m tandem cell had a 12.5% PCE, the same as that of the 10.7 mu m Si cell. The 11.5 mu m tandem cell had 20.2% PCE, while the 11.5 mu m Si cell processed 12.7% PCE. We also analyzed the Si subcell thickness ratio of sub-12 mu m tandem cells for maximum PCE. The tandem cell with a thickness between 40% to 70% of a Si cell would have a max PCE. The ratio depended on the tandem cell thickness. We conclude that the lattice-matched GaNAsP/Si tandem cell has potential for ultrathin thin Si-based solar cell applications.