Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation

Please use this identifier to cite or link to this item: http://scholars.ntou.edu.tw/handle/123456789/2092

Title:	Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation
Authors:	Yao, Y. C. Huang, C. Y. Tai-Yuan Lin Cheng, L. L. Liu, C. Y. Wang, M. T. Hwang, J. M. Lee, Y. J.
Issue Date:	Apr-2015
Journal Volume:	138
Source:	Microelectronic Engineering
URI:	http://scholars.ntou.edu.tw/handle/123456789/2092
ISSN:	0167-9317
DOI:	10.1016/j.mee.2014.11.018 ://WOS:000355035000002
Appears in Collections:	光電與材料科技學系

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