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  1. National Taiwan Ocean University Research Hub
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  3. 光電與材料科技學系
請用此 Handle URI 來引用此文件: http://scholars.ntou.edu.tw/handle/123456789/21821
標題: Design of thin-film configuration of SnO2-Ag2O composites for NO2 gas-sensing applications
作者: Liang, Yuan-Chang 
Hsu, Yu-Wei
關鍵字: microstructure;thin-film configuration;gas-sensing
公開日期: 2-五月-2022
出版社: WALTER DE GRUYTER GMBH
卷: 11
期: 1
起(迄)頁: 1842-1853
來源出版物: NANOTECHNOLOGY REVIEWS
摘要: 
In this study, a two-layered thin-film structure consisting of a dispersed nanoscaled Ag2O phase and SnO2 layer (SA) and a mono-composite film layer (CSA) consisting of a nanoscale Ag2O phase in the SnO2 matrix are designed and fabricated for NO2 gas sensor applications. Two-layered and mono-layered SnO2-Ag2O composite thin films were synthesized using two-step SnO2 and Ag2O sputtering processes and Ag2O/SnO2 co-sputtering approach, respectively. In NO2 gas-sensing measurement results, both SA and CSA thin films that functionalized with an appropriate Ag2O content exhibit enhanced gas-sensing responses toward low-concentration NO2 gas in comparison with that of pristine SnO2 thin film. In particular, a gas sensor made from the mono-composite SnO2-Ag2O layer demonstrates apparently higher NO2 gas-sensing performance than that of double-layered SnO2-Ag2O thin-film sensor. This is attributed to substantially numerous p-n junctions of Ag2O/SnO2 formed in the top region of the SnO2 matrix. The gas-sensing response of the optimal sample (CSA270) toward 10 ppm NO2 gas is 5.91, and the response/recovery speeds in a single cycle dynamic response plot are 28 s/168 s toward 10 ppm NO2, respectively. Such a p-n thin-film configuration is beneficial to induce large electric resistance variation before and after the introduction of NO2 target gas during gas-sensing tests. The experimental results herein demonstrate that the gas-sensing performance of p-n oxide composite thin films can be tuned via the appropriate design of composite thin-film configuration.
URI: http://scholars.ntou.edu.tw/handle/123456789/21821
ISSN: 2191-9089
DOI: 10.1515/ntrev-2022-0111
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